s mhop microelectronics c orp. a STS6N20 symbol v ds v gs i dm a i d units parameter 60 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) ( ) @ vgs=4.5v 1.05 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. surface mount package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a www.samhop.com.tw jun,26,2012 1 details are subject to change without notice. t a =25 c w p d c -55 to 150 t a =25 c maximum power dissipation operating junction and storage temperature range t j , t stg t a =70 c a t a =70 c w a a 0.8 3 1.25 g r p p r p p thermal characteristics thermal resistance, junction-to-ambient r ja a ver 1.0 s g d sot23 g s d
symbol min typ max units bv dss 60 v 1 i gss 10 ua v gs(th) v 0.85 g fs s c iss 41 pf c oss 17 pf c rss 9 pf q g 6.1 nc 9 39 10.5 t d(on) 1.5 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =30v i d =0.4a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time ohm v gs =10v , i d =0.4a v ds =10v , i d =0.4a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =48v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics v gs =4.5v , i d =0.36a 1.05 1.05 1.30 ohm c f=1.0mhz c STS6N20 www.samhop.com.tw jun,26,2012 2 nc q gs nc q gd 0.38 0.57 gate-drain charge gate-source charge v ds =30v,i d =0.4a, v gs =10v drain-source diode characteristics and maximum ratings nc 1 v ds =30v,i d =0.4a,v gs =10v v ds =30v,i d =0.4a,v gs =4.5v v sd diode forward voltage v gs =0v,i s =0.3a 0.86 1.3 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. _ _ _ 1 1.9 3 1.2 ver 1.0
STS6N20 ver 1.0 www.samhop.com.tw jun,26,2012 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) ( ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature 1.5 1.2 0.9 0.6 0.3 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =3.5v v gs =3v v gs =10v v gs =4v v gs =4.5v 1.5 1.2 0.9 0.6 0.3 0 0 0.8 4.8 4.0 3.2 2.4 1.6 25 c tj=125 c -55 c 2.4 2.0 1.6 1.2 0.8 0.4 0.1 0.1 v gs =10v v gs =4.5v 3.0 2.6 2.2 1.8 1.4 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =0.4a v gs =4.5v i d =0.36a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua v gs =5v 0.3 0.6 0.9 1.2 1.5
STS6N20 ver 1.0 www.samhop.com.tw jun,26,2012 4 r ds(on) ( ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 2.4 2.0 1.6 1.2 0.8 0.4 0 2468 10 0 1 0 0.4 5 2.0 0.8 1.2 1.6 60 50 40 30 20 10 0 10 15 20 25 30 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 60 1 0.1 125 c 75 c 25 c i d =0.4a 25 c 125 c 75 c 05 r d s (on) li mi t v ds =30v,i d =0.4a v gs =10v crss ciss coss v ds =30v i d =0.4a td(on) td(off) tr tf 10 100 1 1 10 100 v gs =10v single pulse t a =25 c 100us 1ms 10 m s 10 0 ms 10s dc
www.samhop.com.tw jun,26,2012 5 STS6N20 ver 1.0 norm aliz ed transien t therma l r esis tance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 0.01 0. 1 1 10 0.01 single pulse t 1 t 2 1. r thj a (t)=r (t) * r ja 2. r ja =s ee datasheet 3. t jm- t a =p dm *r ja (t) 4. duty cycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 p dm 100 10 1 0.1 0.001 0.0001 0.00001 1000
www.samhop.com.tw jun,26,2012 6 STS6N20 ver 1.0 package outline dimensions sot 23 d e e1 e e1 b 1 2 3 l detail "a" millimeters inches symbols d e 2.700 3.100 2.200 3.000 e1 1.200 1.700 e e1 b 0.350 0.510 c 0.090 0.200 a a1 a a1 0.000 0.102 0.887 1.200 l1 l l1 0.550 ref. 0 o 10 o 0.106 0.122 0.087 0.118 0.047 0.067 0.014 0.020 0.004 0.008 0.000 0.004 0.035 0.047 0.022 ref. 0 o 10 o min max min max 0.850 1.150 0.033 0.045 1.800 2.100 0.071 0.083 0.450 ref. 0.018 ref. detail "a"
www.samhop.com.tw jun,26,2012 7 STS6N20 ver 1.0 sot-23 tape and reel data sot-23 carrier tape sot-23 reel 3.20 2 0.10 3.00 2 0.10 1.33 2 0.10 1.00 +0.25 1.50 +0.10 8.00 +0.30 -0.10 1.75 2 0.10 3.50 2 0.05 4.00 2 0.10 4.00 2 0.10 2.00 2 0.05 0.20 2 0.02 178 178 2 1 60 2 1 9.00 2 0.5 12.00 2 0.5 13.5 ! ! 2 0.5 2.00 2 0.5 10.0 18.00 5.00 8 @ v unit: @ r g s k h w1 w n m 10.5 reel size tape size unit: @ package sot-23 a0 b0 k0 d0 d1 e e1e2p0 p1p2 t tr feed direction
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